Exploiting CMOS technology to enhance the performance of ISFET sensors

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1053-1055

  Prodromakis, Themistoklis ^a   Liu, Yan ^a   Constandinou, Timothy ^a   Georgiou, Pantelis ^a   Toumazou, Chris ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

CMOS; ion sensitive field effect transistor (ISFET); passivation opening

Indexed keywords

CHEMICAL SENSITIVITY; CMOS; CMOS TECHNOLOGY; FLOATING-GATE STRUCTURES; INSULATING LAYERS; ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET); ISFET SENSORS; MOS GATES; NOISE POWER; NOVEL METHODS; PARASITIC EFFECT; PROTECTIVE PASSIVATION; SENSING MEMBRANES; TRANSCONDUCTANCE EFFICIENCY; TRAPPED CHARGE;

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; IONS; PROTECTIVE COATINGS; TRANSCONDUCTANCE;

PASSIVATION;

EID: 77956176461     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052011     Document Type: Article

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