ISFET threshold voltage programming in CMOS using hot-electron injection

Electronics Letters

Volumn 45, Issue 22, 2009, Pages 1112-1113

  Georgiou, P ^a   Toumazou, C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER SOLUTIONS; CMOS PROCESSS; PH BUFFERS; SUPPLY VOLTAGES; THRESHOLD VOLTAGE SHIFTS; THRESHOLD VOLTAGE VARIATION; TRAPPED CHARGE;

BANDPASS FILTERS; ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; ION SENSITIVE FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

PH EFFECTS;

EID: 70350518637     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.2310     Document Type: Article

References (7)

1. Bausells, J., Carrabina, J., Errachid, A., and Merlos, A.: ' Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology ', Sens. Actuators B, Chem., 1999, 57, (1-3), p. 56-62
2. Bergveld, P.: ' Thirty years of ISFETology - what happened in the past 30 years and what may happen in the next 30 years ', Sens. Actuators B, Chem., 2003, 88, (1), p. 1-20
3. Hammond, P., Cumming, D., and Ali, D.: ' A single-chip pH sensor fabricated by a conventional CMOS process ', Proc. of IEEE Sensors, 2002, 1, p. 350-355
4. Milgrew, M., and Cumming, D.: ' Matching the transconductance characteristics of CMOS ISFET arrays by removing trapped charge ', IEEE Trans. Electron Devices, 2008, 55, (4), p. 1074-1079
5. Millard, W., Kalyjian, Z., and Andreou, A.: ' Calibration and matching of floating gate devices ', Proc. of 2000 IEEE Int. Symp. on Circuits and Systems, (ISCAS 2000), Geneva, Switzerland, 2000, 4
6. Shepherd, L., and Toumazou, C.: ' Weak inversion ISFETs for ultra-low power biochemical sensing and real-time analysis ', Sens. Actuators B, Chem., 2005, 107, (1), p. 468-473
7. Shepherd, L., Georgiou, P., and Toumazou, C.: ' A novel voltage-clamped CMOS ISFET sensor interface ', Proc. of IEEE Int. Symp. on Circuits and Systems, (ISCAS'07), 2007, p. 3331-3334