Effect of mobile ionic-charge on CMOS based Ion-Sensitive Field-Effect Transistors (ISFETs)

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn , Issue , 2009, Pages 2165-2168

  Prodromakis, T ^a   Georgiou, P ^a   Michelakis, K ^a   Toumazou, C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Chemical sensor; CMOS; Drift; ISFET; Mobile ionic charge; Threshold variation; Trapped charge

Indexed keywords

CMOS; DRIFT; ISFET; MOBILE IONIC CHARGE; THRESHOLD VARIATION; TRAPPED CHARGE;

CHEMICAL SENSORS; FIELD EFFECT TRANSISTORS; STRONTIUM COMPOUNDS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 70350173928     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2009.5118225     Document Type: Conference Paper

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