ISFET characteristics in CMOS and their application to weak inversion operation

Sensors and Actuators, B: Chemical

Volumn 143, Issue 1, 2009, Pages 211-217

  Georgiou, Pantelis ^a   Toumazou, Christofer ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Biochemical VLSI; ISFETs; Low power; pH sensor; Weak inversion

Indexed keywords

BIOCHEMICAL VLSI; BUILDING BLOCKES; CMOS INTEGRATED CIRCUIT DESIGN; CMOS PROCESSS; FUNCTIONAL OPERATION; INTRINSIC CHARACTERISTICS; LOW CURRENTS; LOW POWER; MOS-FET; PASSIVATION LAYER; PH SENSITIVITY; SENSOR OPERATIONS; TRAPPED CHARGE; VLSI SYSTEM; WEAK INVERSIONS;

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; MOS CAPACITORS; PASSIVATION; PH EFFECTS; SENSORS;

PH SENSORS;

EID: 71849098395     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.09.018     Document Type: Article

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