SCOPUS 정보 검색 플랫폼

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

Investigation of InxGa1-xAs ultra-thin-body tunneling FETs using a full-band and atomistic approach

(2) Luisier, Mathieu a Klimeck, Gerhard a

a Purdue University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC APPROACH; DOUBLE-GATE; DOUBLE-GATE DEVICE; FULL BAND; GATE LENGTH; OFF-CURRENT; ON-CURRENTS; QUANTUM MECHANICAL; SOURCE-TO-DRAIN TUNNELING; SPIN-ORBIT COUPLINGS; SUBTHRESHOLD SLOPE; TIGHT BINDING METHODS; TUNNELING FET; TUNNELING FIELD-EFFECT TRANSISTORS; ULTRA-THIN-BODY;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; INDIUM; LIGHT POLARIZATION; QUANTUM THEORY; TUNNELING (EXCAVATION); WIND TUNNELS;

SEMICONDUCTOR DEVICES;

EID: 74349113495 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2009.5290248 Document Type: Conference Paper

Times cited : (19)

References (13)

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- Boykin, T.B.¹

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