High-frequency capacitance-voltage characteristics of PECVD-grown SiO2 MIS structure on GaN and GaN/AL0.4Ga0.6N/GaN heterostructure

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Chen, P ^a   Zhou, Y G ^a   Bu, H M ^a   Li, W P ^a   Chen, Z Z ^a   Shen, B ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

CAPACITANCE-VOLTAGE CHARACTERISTICS; FLAT-BAND SHIFT; GALLIUM NITRIDE EPITAXIAL LAYER; POLARIZATION HYSTERESIS WINDOW; SILICA FILM;

GALLIUM NITRIDE;

EID: 0035557668     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. MOS (Metal oxide semiconductor) physics and technology