Admittance spectroscopy of interface states in ZnO/HfO2 thin-film electronics

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1713-1715

  Siddiqui, Jeffrey J ^a   Phillips, Jamie D ^a   Leedy, Kevin ^b   Bayraktaroglu, Burhan ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Admittance spectroscopy (AS); Hafnium oxide HfO 2; Interface charge density; Zinc oxide (ZnO)

Indexed keywords

ADMITTANCE SPECTROSCOPIES; ADMITTANCE SPECTROSCOPY (AS); COLE-COLE PLOTS; CURRENT VOLTAGE; DEBYE BEHAVIOR; ENERGY DEPENDENT; EXPONENTIAL DECAYS; INTEGRATED INTERFACE; INTERFACE CHARGE DENSITY; INTERFACE STATE; INTERFACE STATE DENSITY; METAL INSULATOR SEMICONDUCTOR CAPACITORS; SUB-THRESHOLD BEHAVIOR; ZNO;

CONDUCTION BANDS; ELECTRIC ADMITTANCE; ELECTRONIC PROPERTIES; HAFNIUM; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; MIS DEVICES; TRANSISTORS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 81855183747     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2170399     Document Type: Article

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