Characterisation of charge trapping at the Si-SiO2 (100) interface using high-temperature conductance spectroscopy

Microelectronic Engineering

Volumn 65, Issue 1-2, 2002, Pages 103-112

  Duval, E ^a   Lheurette, Eric ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

Conductance spectroscopy; Interface states; Pb centres; Trivalent defects; UV assisted capacitance measurements

Indexed keywords

ELECTRIC CONDUCTANCE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SILICA; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

CHARGE TRAPPING;

MOS DEVICES;

EID: 0036893474     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00732-3     Document Type: Article

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