Electrical instabilities and low-frequency noise in InGaZnO thin film transistors

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2010, Pages

  Lee, Jong Ho ^b   Kwon, Hyuck In ^a   Shin, Hyungcheol ^b   Park, Byung Gook ^b   Park, Young June ^b  

^a Chung Ang University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BULK MOBILITY; ELECTRICAL INSTABILITY; GATE VOLTAGES; LINEAR OPERATIONS; LOW FREQUENCY RANGE; LOW-FREQUENCY NOISE; MODELING STUDIES; NOISE POWER SPECTRAL DENSITY; NORMALIZED NOISE; POWER LAW; STRESS-INDUCED; THRESHOLD VOLTAGE SHIFTS; TIME DEPENDENCE; VOLTAGE INSTABILITY;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; POWER SPECTRAL DENSITY; QUALITY ASSURANCE; THERMAL NOISE; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

FAILURE ANALYSIS;

EID: 77956437008     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2010.5532306     Document Type: Conference Paper

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