Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Monig H ^a,b   Kaufmann, C A ^b   Fischer, Ch H ^b,c   Grimm, A ^b   Caballero, R ^b,d   Johnson, B ^b   Eicke, A ^e   Lux Steiner, M Ch ^b,c   Lauermann, I ^b  

^a YALE UNIVERSITY   (United States)

^b HAHN MEITNER INSTITUT   (Germany)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

^d UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^e ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER FILMS; ABSORBER LAYERS; ANGLE-DEPENDENT; CARRIER COLLECTION; CHALCOPYRITE THIN FILMS; CONCENTRATION ANALYSIS; CU(IN , GA)SE; DEPTH RANGE; DEPTH-PROFILE ANALYSIS; DEVICE PERFORMANCE; INFORMATION DEPTH; OPTIMUM BALANCE; PHOTOEXCITED CARRIERS; SECONDARY NEUTRAL MASS SPECTROMETRY; SOFT X RAY EMISSION SPECTROSCOPY; SOLID BASIS; SPACE CHARGE REGIONS; SUBSTRATE TEMPERATURE;

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); COPPER; COPPER COMPOUNDS; EMISSION SPECTROSCOPY; FILM GROWTH; GALLIUM; MASS SPECTROMETRY; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR ABSORBERS; THIN FILMS;

GALLIUM ALLOYS;

EID: 81355163372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3656986     Document Type: Article

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