Band-gap engineering in Cu(In,Ga) Se2 thin films grown from (In,Ga) 2Se3 precursors

Solar Energy Materials and Solar Cells

Volumn 41-42, Issue , 1996, Pages 247-260

  Gabor, Andrew M ^a   Tuttle, John R ^a   Bode, Michael H ^a   Franz, Amy ^a   Tennant, Andrew L ^a   Contreras, Miguel A ^a   Noufi, Rommel ^a   Jensen, D Garth ^b   Hermann, Allen M ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CHEMICAL REACTIONS; DEPOSITION; DIFFUSION; ENERGY GAP; FABRICATION; GALLIUM; SURFACES; THIN FILMS;

BAND GAP GRADING; DEGREE OF GRADING; PRECURSOR FILMS;

SOLAR CELLS;

EID: 0030169786     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00122-0     Document Type: Article

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