Composition dependence of defect energies and band alignments in the Cu(In 1-xGa x)(Se 1-yS y) 2 alloy system

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1391-1399

  Turcu, M ^a   Kotschau I M ^a   Rau, U ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ACTIVATION; ACCEPTOR ENERGY; ACCEPTOR LEVELS; ACCEPTOR STATE; ADMITTANCE SPECTROSCOPIES; ALLOY SYSTEM; BAND ALIGNMENTS; CDS; CHALCOPYRITE THIN FILMS; COMPOSITION DEPENDENCE; COMPOSITION RANGES; CONSTANT ENERGY; DEFECT ENERGY; ENERGY POSITION; ENERGY SCALE; HETEROJUNCTION SOLAR CELLS; OPEN CIRCUITS; POLYCRYSTALLINE; REFERENCE LEVELS; SEMICONDUCTOR SYSTEMS; VALENCE BAND OFFSETS; ZNO;

ACTIVATION ENERGY; ALLOYING; COPPER COMPOUNDS; DEFECTS; GALLIUM; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84861419529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432126     Document Type: Article

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