Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Wan Han, Kyu ^a   Ho Lee, Min ^a   Whan Kim, Tae ^a   Yeol Yun, Dong ^a   Woo Kim, Sung ^b   Wook Kim, Sang ^b  

^a Hanyang University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; CORE-SHELL; CURRENT LEAKAGE; ELECTRICAL CHARACTERISTIC; FLAT-BAND VOLTAGE SHIFT; HIGH ELECTRIC FIELDS; HYSTERESIS BEHAVIOR; MEMORY WINDOW; NONVOLATILE MEMORY DEVICES; OPERATING MECHANISM; RETENTION TIME; ZNS QUANTUM DOTS;

CAPACITANCE; ELECTRIC FIELDS; ESTERS; NONVOLATILE STORAGE; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 81155145946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659473     Document Type: Article

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