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Applied Physics Letters

Volumn 95, Issue 9, 2009, Pages

Floating-gate memory based on an organic metal-insulator-semiconductor capacitor

(3) William, S a Mabrook, M F a Taylor, D M a

a BANGOR UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CONTROL GATES; CRITICAL AMPLITUDES; ELECTRON TRAPPING; FLOATING GATE MEMORIES; FLOATING-GATES; GOLD FILM; HOLE TRAPPING; METAL INSULATOR SEMICONDUCTOR CAPACITORS; ORGANIC METALS; POLY (3-HEXYLTHIOPHENE); VOLTAGE SWEEP;

CAPACITANCE; CAPACITORS; GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; METAL INSULATOR BOUNDARIES; MIS DEVICES; ORGANIC CONDUCTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69949141085 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3223606 Document Type: Article

Times cited : (21)

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