Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer

Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

  Yun, Dong Yeol ^a   Jung, Jae Hun ^a   Lee, Dea Uk ^a   Kim, Tae Whan ^a   Ryu, E D ^b   Kim, S W ^b  

^a Hanyang University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CDSE NANOPARTICLES; CDTE; CDTE NANOPARTICLES; CORE-SHELL; ELECTRICAL PROPERTY; FLAT-BAND VOLTAGE SHIFT; HYSTERESIS BEHAVIOR; NONVOLATILE MEMORY DEVICES; POLY(9-VINYLCARBAZOLE); RETENTION TIME; SHELL LAYERS; SI DEVICES;

CADMIUM COMPOUNDS; CAPACITANCE; FABRICATION; NANOPARTICLES; NONVOLATILE STORAGE; SHELLS (STRUCTURES); TIME MEASUREMENT;

CADMIUM ALLOYS;

EID: 77950305575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3360215     Document Type: Article

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