Formation of high-quality I#III#VI semiconductor nanocrystals by tuning relative reactivity of cationic precursors

Journal of the American Chemical Society

Volumn 131, Issue 15, 2009, Pages 5691-5697

  Xie, Renguo ^a   Rutherford, Michael ^a   Peng, Xiaogang ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-STABLE; CATALYTIC REAGENTS; COORDINATING SOLVENTS; COPPER SALT; CORE/SHELL NANOCRYSTALS; EMISSION PEAKS; HIGH QUALITY; MONODISPERSE; ONE POT; PHOTOLUMINESCENCE QUANTUM YIELDS; RAPID OXIDATION; REACTION TEMPERATURE; RELATIVE REACTIVITIES; SEMICONDUCTOR NANOCRYSTALS; SILVER SALTS; STOICHIOMETRIC RATIO; SYNTHETIC STRATEGIES;

AMINES; CATALYTIC OXIDATION; NANOCRYSTALS; OPTICAL PROPERTIES; SALTS; SYNTHESIS (CHEMICAL); ZINC SULFIDE;

SILVER;

AMINE; COPPER; COPPER DERIVATIVE; NANOCRYSTAL; QUANTUM DOT; SILVER DERIVATIVE; CATION; SILVER; THIOL DERIVATIVE;

ARTICLE; CATALYSIS; ONE POT SYNTHESIS; OXIDATION; PHOTOLUMINESCENCE; QUANTUM YIELD; STOICHIOMETRY; TEMPERATURE; CHEMISTRY; GREEN CHEMISTRY; TECHNIQUE;

CATIONS; COPPER; GREEN CHEMISTRY TECHNOLOGY; METHODS; QUANTUM DOTS; SILVER; SULFHYDRYL COMPOUNDS;

EID: 67849086909     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9005767     Document Type: Article

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