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Applied Physics Letters

Volumn 93, Issue 23, 2008, Pages

Organic heterostructure device with nonvolatile memory behavior using electrically doped layers

(3) Lindner, Frank a Walzer, Karsten a Leo, Karl a

a DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DATA STORAGE EQUIPMENT; HETEROJUNCTIONS; SEMICONDUCTING ORGANIC COMPOUNDS; TIN; TITANIUM COMPOUNDS;

BISTABLE; DOPED LAYERS; ELECTRICAL SWITCHING; HETEROSTRUCTURE DEVICES; HETEROSTRUCTURES; INDIUM TIN OXIDES; METAL CONTACTS; MULTI STATES; NONVOLATILE MEMORIES; NOVEL DEVICE STRUCTURES; ON/OFF RATIOS; ORGANIC HETEROSTRUCTURE; ORGANIC LAYERS; ORGANIC MULTILAYERS; ORGANIC SEMICONDUCTORS; QUANTUM WELLS; SWITCHING BEHAVIORS; SWITCHING MECHANISMS; TWO STATES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 57649131603 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3046723 Document Type: Article

Times cited : (15)

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