Optical and microstructural properties versus indium content in In x Ga1-x N films grown by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Gokarna, A ^a   Gauthier Brun, A ^a,b   Liu, W ^b   Androussi, Y ^a,d   Dumont, E ^c   Dogheche, E ^a   Teng, J H ^b   Chua, S J ^b   Decoster, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c UNIVERSITY OF MONS   (Belgium)

^d UNIVERSITÉ LILLE 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRIC ANALYSIS; INDIUM CONTENT; LORENTZ DISPERSION; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURAL PROPERTIES; OPTICAL INDICES; SECONDARY ION MASS SPECTROSCOPY; SINGLE PHASE;

INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

DISPERSION (WAVES);

EID: 77952964799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3425761     Document Type: Article

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