High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Optics Express

Volumn 19, Issue 23, 2011, Pages 23341-23349

  Marshall, Andrew R J ^a   Ker, Pin Jern ^b   Krysa, Andrey ^b   David, John P R ^b   Tan, Chee Hing ^b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; AVALANCHE PHOTODIODES; DIRECT COUPLED AMPLIFIERS; INDIUM ARSENIDE; SEMICONDUCTING INDIUM;

3 DB BANDWIDTH; AVALANCHE GAINS; ELECTRON AVALANCHE PHOTODIODE; GAIN-BANDWIDTH PRODUCTS; HIGH BANDWIDTH; INAS; UNCOOLED;

BANDWIDTH;

EID: 80755167794     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.023341     Document Type: Article

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