Fabrication of InAs photodiodes with reduced surface leakage current

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6740, Issue , 2007, Pages

  Marshall, Andrew R J ^a   Tan, Chee Hing ^a   David, John P R ^a   Ng, Jo Shien ^a   Hopkinson, Mark ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

InAs; Mid wave infrared photodiodes; Surface leakage current; Wet etching

Indexed keywords

ACIDS; ALUMINUM ARSENIDE; CRYSTAL GROWTH; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM ARSENIDE; LEAKAGE CURRENTS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL MATERIALS; PHOSPHORIC ACID; PHOTODIODES; SEMICONDUCTING INDIUM; SULFURIC ACID; SURFACE ANALYSIS; SURFACES;

ATOMIC COMPOSITIONS; AUGER ANALYSIS; ETCHED SURFACES; ETCHING PROCESS; ETCHING RATES; INAS; LATTICE-MATCHED; MID-WAVE INFRARED PHOTODIODES; PHOTODIODE STRUCTURES; PIXEL ARRAYS; REVERSE LEAKAGE CURRENTS; SINGLE ETCH; SMALL PITCHES; SULPHURIC ACIDS; SURFACE LEAKAGE CURRENT; SURFACE PROFILE ANALYSIS;

WET ETCHING;

EID: 57549112383     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.740700     Document Type: Conference Paper

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