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Japanese Journal of Applied Physics

Volumn 50, Issue 11 PART 1, 2011, Pages

Removal of surface oxide layer from silicon nanocrystals by hydrogen fluoride vapor etching

(4) Nakamine, Yoshifumi a Kodera, Tetsuo a Uchida, Ken a Oda, Shunri a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT INCREASE; ELECTRICAL MEASUREMENT; FOUR-ORDER; HF ETCHING; HF VAPOR ETCHING; HYDROGEN FLUORIDE; NATURAL OXIDATION; NATURAL OXIDES; OXIDE LAYER; SEMICONDUCTOR INDUSTRY; SILICON NANOCRYSTALS; SURFACE OXIDE LAYER; VAPOR ETCHING;

ELECTRIC VARIABLES MEASUREMENT; HYDROGEN; NANOCRYSTALS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON OXIDES; VAPORS;

WET ETCHING;

EID: 80755123064 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.115002 Document Type: Article

Times cited : (10)

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