Rail-to-rail, linear hot-electron injection programming of floating-gate voltage bias generators at 13-bit resolution

IEEE Journal of Solid-State Circuits

Volumn 46, Issue 11, 2011, Pages 2685-2692

  Huang, Chenling ^a   Sarkar, Pikul ^a   Chakrabartty, Shantanu ^a  

^a Michigan State University   (United States)

Author keywords

Adaptive programming; floating gate transistor; hot electron injection; injection rate; pulse width modulation

Indexed keywords

ACTIVE FEEDBACK; ADAPTIVE PROGRAMMING; CURRENT REFERENCE; FLOATING-GATE TRANSISTOR; FLOATING-GATE VOLTAGE; FLOATING-GATE VOLTAGE REFERENCES; INJECTION PROCESS; INJECTION PULSE; INJECTION RATE; INJECTION RATES; MEASURED DATA; MEASURED RESULTS; NON-LINEARITY; NONLINEAR FACTORS; ON CHIPS; PREDICTIVE MODELS; RAIL-TO-RAIL; STANDARD CMOS PROCESS; VOLTAGE RANGES;

CMOS INTEGRATED CIRCUITS; ELECTRON INJECTION; ELECTRONS; NONLINEAR FEEDBACK; VOLTAGE CONTROL;

BANDPASS FILTERS;

EID: 80255138084     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2011.2167390     Document Type: Conference Paper

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