1 M-cell 6 b/cell analog flash memory for digital storage

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 1998, Pages 334-335,-459

  Rolandi, P L ^a   Canegallo, R ^a   Chioffi, E ^a   Gerna, D ^a   Guaitini, G ^a   Issartel, C ^a   Lhermet, F ^a   Pasotti, M ^a   Kramer, A ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; PROM;

ANALOG FLASH MEMORY; FOWLER-NORDHEIM TUNNELING ERASING; HOT ELECTRON PROGRAMMING; MULTI LEVEL PROGRAMMING;

ANALOG STORAGE;

EID: 0031703348     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)