Medium-range order in amorphous silicon investigated by constrained structural relaxation of two-body and four-body electron diffraction data

Acta Materialia

Volumn 60, Issue 1, 2012, Pages 359-375

  Borisenko, Konstantin B ^a   Haberl, Bianca ^b   Liu, Amelia C Y ^c   Chen, Yixin ^a   Li, Guoqiang ^a,d   Williams, James S ^b   Bradby, Jodie E ^b   Cockayne, David J H ^a   Treacy, Michael M J ^a,e  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c MONASH UNIVERSITY   (Australia)

^d SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^e ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Amorphous materials; Medium range order; Short range order; Silicon; Structure

Indexed keywords

ANNEALED MATERIALS; ANNEALED STATE; BEST-FIT MODELS; COMPUTATIONAL TIME; CONTINUOUS RANDOM NETWORKS; CRYSTALLINE ORDER; CRYSTALLINE PLANES; ELECTRON DIFFRACTION DATA; FLUCTUATION ELECTRON MICROSCOPIES; HEXAGONAL STRUCTURES; MEDIUM-RANGE ORDER; MONTE CARLO; PARACRYSTALLITES; POSSIBLE SOLUTIONS; POTENTIAL FUNCTION; RELAXATION PROCEDURES; SELECTED AREA ELECTRON DIFFRACTION; SEMI-QUANTITATIVE; SHORT-RANGE ORDER; STRUCTURAL FORM; TERSOFF POTENTIAL; THIN AMORPHOUS MATERIALS;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; SILICON; STRUCTURAL RELAXATION; STRUCTURE (COMPOSITION);

AMORPHOUS MATERIALS;

EID: 80155193199     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.09.039     Document Type: Article

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