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Volumn 99, Issue 16, 2011, Pages

In situ x-ray study of the formation of defects in Ge islands on Si(001)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; EPITAXIAL GROWTH; NONDESTRUCTIVE EXAMINATION;

EID: 80155154271     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3654153     Document Type: Article
Times cited : (8)

References (19)
  • 2
    • 0033521177 scopus 로고    scopus 로고
    • 10.1126/science.286.5446.1931
    • F. M. Ross, R. M. Tromp, and M. Reuter, Science 286, 1931 (1999). 10.1126/science.286.5446.1931
    • (1999) Science , vol.286 , pp. 1931
    • Ross, F.M.1    Tromp, R.M.2    Reuter, M.3
  • 7
    • 0034899101 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.63.205424
    • B. J. Spencer and J. Tersoff, Phys. Rev. B 63, 205424 (2001). 10.1103/PhysRevB.63.205424
    • (2001) Phys. Rev. B , vol.63 , pp. 205424
    • Spencer, B.J.1    Tersoff, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.