Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Sontheimer, T ^a   Becker, C ^a   Bloeck, U ^a   Gall, S ^a   Rech, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COATED GLASS; CRYSTALLIZATION PROCESS; GROWTH VELOCITY; LOW-ACTIVATION ENERGY; NUCLEATION PROCESS; POLYCRYSTALLINE SILICON THIN FILM; STEADY-STATE NUCLEATION RATE; TEMPERATURE DEPENDENT; TEMPERATURE REGIMES; THIN FILM SOLAR CELLS; ZNO;

ACTIVATION ENERGY; ALUMINUM; AMORPHOUS FILMS; CRYSTALLIZATION KINETICS; GLASS; LIGHT TRANSMISSION; NUCLEATION; OPTICAL MICROSCOPY; PHOTOVOLTAIC CELLS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON NITRIDE; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 70249083005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3222917     Document Type: Article

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