GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 3-4, 2010, Pages 370-373

  Pagels, M ^a   Reinhardt, F ^b   Pollakowski, B ^b   Roczen, M ^c   Becker, C ^c   Lips, K ^c   Rech, B ^c   Kanngiesser B ^a   Beckhoff, B ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

Depth profiles; Grazing incidence X ray fluorescence; Near edge X ray absorption fine structure spectroscopy; Reference free; Silicon thin film solar cell; ZnO Si interface

Indexed keywords

DEPTH PROFILE; GRAZING INCIDENCE; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; REFERENCE-FREE; THIN-FILM SOLAR CELLS; X RAY FLUORESCENCE;

ABSORPTION; ANNEALING; CHEMICAL SPECIATION; FLUORESCENCE; SILICON SOLAR CELLS; SOLAR CELLS; SPECTROSCOPIC ANALYSIS; THIN FILM DEVICES; X RAY ABSORPTION; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; X RAY SPECTROSCOPY; ZINC OXIDE;

ABSORPTION SPECTROSCOPY;

EID: 76049110298     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.09.009     Document Type: Article

References (8)

1. Becker C., Conrad E., Dogan P., Fenske F., Gorka B., Hänel T., Lee K.Y., Rau B., Ruske F., Weber T., Berginski M., Hüpkes J., Gall S., and Rech B. Sol. Energ. Mater. Sol. Cells 93 (2009) 855
2. Pollakowski B., Beckhoff B., Reinhardt F., Braun S., and Gawlitza P. Phys. Rev. B 77 (2008) 235408
3. Agashe C., Kluth O., Hüpkes J., Zastrow U., Rech B., and Wuttig M. J. Appl. Phys. 95 (2004) 1911
4. Windt D.L. Comput. Phys. 12 (1998) 360
5. Beckhoff B., Fliegauf R., Kolbe M., Müller M., Weser J., and Ulm G. Anal. Chem. 79 (2007) 7873
6. Elam W.T., Ravel B.D., and Sieber J.R. Radiat. Phys. Chem. 63 (2002) 121
7. Tröger L., Arvanitis D., Baberschke K., Michaelis H., Grimm U., and Zschech E. Phys. Rev. B 46 (1992) 3283
8. Liu Y., Hsieh J.-H., and Tung S.K. Jpn. J. App. Phys. 46 (2007) 6068