Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers

Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

  Becker, C ^a   Ruske, F ^a   Sontheimer, T ^a   Gorka, B ^a   Bloeck, U ^a   Gall, S ^a   Rech, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COLLECTION; CONDUCTIVE LAYER; CRYSTAL SIZE AND SHAPE; CRYSTALLINE PHASE; DEFECT ANALYSIS; DEPOSITION TEMPERATURES; ELECTRICAL QUALITY; ELECTRON BEAM EVAPORATION; EXTERNAL QUANTUM EFFICIENCY; HIGHER TEMPERATURES; LOW TEMPERATURES; MICRO-STRUCTURAL; OPEN CIRCUITS; PHOTOVOLTAIC PARAMETERS; PHOTOVOLTAIC PERFORMANCE; POLY-SI; POLY-SI FILMS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN FILM; RANDOMLY ORIENTED GRAINS; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SILICON FILMS; SOLAR CELL PARAMETERS; SOLID PHASE CRYSTALLIZATION; TEMPERATURE STABLE; THERMAL-ANNEALING; THIN-FILM SOLAR CELLS; TWO-TEMPERATURE; ZNO;

CONDUCTIVE FILMS; CRYSTAL ORIENTATION; ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; MICROSTRUCTURE; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SOLAR CELLS; THERMAL EVAPORATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

MICROCRYSTALLINE SILICON;

EID: 70350707502     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3240343     Document Type: Article

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