Structural investigations of the C49-C54 transformation in TiSi2 thin films

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 115-122

  Chenevier, B ^a   Chaix Pluchery, O ^a   Matko, I ^a   Madar, R ^a   La Via, F ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN SIZE AND SHAPE; LIGHT POLARIZATION; MICROSTRUCTURE; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

VACUUM ANNEALING PROCESS;

SEMICONDUCTING FILMS;

EID: 0034823541     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00436-6     Document Type: Article

References (9)

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6. 2 thin films on (001) Si, Appl. Phys. Lett. 74 (1999) 1406.
7. 2 lines, in: G. Baccarani, M. Rudan (Eds.), Proceedings 26th ESSDERC'96, Editions Frontieres, 1996, p. 609.
8. B. Chenevier, J.P. Sénateur, V. Ghetta, J. La Manna, B. Bochu, G. Delabouglise, A new and versatile high-temperature X-ray diffraction stage, J. Appl. Phys., submitted.
9. I. De Wolf, D.J. Howard, A. Lauwers, K. Maex, H.E. Maes, Local identification and mapping of the C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy, Appl. Phys. Lett. 70 (1997) 2262.