Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes

Journal of Crystal Growth

Volumn 335, Issue 1, 2011, Pages 58-61

  Nemcsics, A ^a,b   Heyn, Ch ^c   Toth L ^a   Dobos, L ^a   Stemmann, A ^c   Hansen, W ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b Institute for Microelectronics and Technology   (Hungary)

^c UNIVERSITY OF HAMBURG   (Germany)

Author keywords

A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

A1. ETCHING; A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELEMENTAL MAPPING; EXTENDED DEFECT; GAAS; NANOHOLES; SELF-ORGANIZED; SEMI-CONDUCTOR SURFACES; STRAIN-FREE;

DROPS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ETCHING; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80054740943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.005     Document Type: Article

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