Intermixing in self-assembled InAs quantum dot formation

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 46-50

  Heyn, Ch ^a   Bolz, A ^a   Maltezopoulos, T ^a   Johnson, R L ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

A1. High resolution X ray diffraction; A1. Low dimensional structures; A1. Reflection high energy electron diffraction; A1. Segregation; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; KINETIC ENERGY; MODIFICATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION;

INTERMIXING; LOW-DIMENSIONAL STRUCTURES; QUANTUM-SIZE STRUCTURES; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; SEMICONDCUTING III-V MATERIALS;

INDIUM COMPOUNDS;

EID: 18444376201     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.055     Document Type: Conference Paper

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