Optical properties of GaAs quantum dots fabricated by filling of self-assembled nanoholes

Nanoscale Research Letters

Volumn 5, Issue 3, 2010, Pages 576-580

  Heyn, Ch ^a   Stemmann, A ^a   Koppen T ^a   Strelow, Ch ^a   Kipp, T ^a   Grave, M ^a   Mendach, S ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Atomic force microscopy; Droplet etching; Molecular beam epitaxy; Photoluminescence; Quantum dots

Indexed keywords

BROADBAND EMISSION; DEEP HOLES; DEPTH DISTRIBUTION; ETCHING TECHNIQUE; GAAS; MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE; NANOHOLES; OPTICAL EMISSIONS; PROCESS PARAMETERS; QUANTUM DOT; QUANTUM RING; SELF-ASSEMBLED; SEMI-CONDUCTOR SURFACES; STRAIN-FREE;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DROP FORMATION; ETCHING; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77950516731     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9507-3     Document Type: Article

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