Influence of Ga coverage and As pressure on local droplet etching of nanoholes and quantum rings

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Heyn, Ch ^a   Stemmann, A ^a   Eiselt, R ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; DROP FORMATION; ETCHING; GALLIUM; INDIUM ARSENIDE;

ATOMIC FORCES; ETCHING PROCESS; EXPERIMENTAL OBSERVATIONS; GAAS; NANO-HOLES; PROCESS CONDITIONS; QUANTUM RING FORMATIONS; QUANTUM RINGS;

NANORINGS;

EID: 62549145777     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079789     Document Type: Article

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