New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 9 A/B, 1999, Pages

  Mano, Takaaki ^a,b   Watanabe, Katsuyuki ^a,c   Tsukamoto, Shiro ^a   Fujioka, Hiroshi ^b   Oshima, Masaharu ^b   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DROPLET EPITAXY; FULL WIDTH AT HALF MAXIMUM (FWHM); SELF-ORGANIZED GROWTH METHODS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033353357     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1009     Document Type: Article

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