Growth of InAs nanocrystals on GaAs(1 0 0) by droplet epitaxy

Journal of Crystal Growth

Volumn 212, Issue 1, 2000, Pages 67-73

  Lee, Ji Myon ^a   Hyun Kim, Do ^b   Hong, Hoony ^b   Woo, Jong Chun ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); DROP FORMATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SUBSTRATES; SURFACE ROUGHNESS;

DROPLET EPITAXY; ROOT-MEAN-SQUARE ROUGHNESS; SELF-ASSEMBLED NANOCRYSTALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0343826851     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00876-3     Document Type: Article

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