Highly uniform and strain-free GaAs quantum dots fabricated by filling of self-assembled nanoholes

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Heyn, Ch ^a   Stemmann, A ^a   Koppen T ^a   Strelow, Ch ^a   Kipp, T ^a   Grave, M ^a   Mendach, S ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILLING LEVELS; FINE-STRUCTURE SPLITTING; GAAS; HOLE STATE; NANO-HOLES; PARABOLIC POTENTIALS; QUANTUM DOTS; SELF-ASSEMBLED; STRAIN-FREE;

ALUMINUM ARSENIDE; GALLIUM ALLOYS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65549106897     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133338     Document Type: Article

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