Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 317-323

  Neudeck, Philip G ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

4H SiC; Minority carrier lifetime; p n junctions; Surface recombination

Indexed keywords

EID: 0000298819     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0408-5     Document Type: Article

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