Determination of minority-carrier lifetime in multicrystalline silicon solar cells using current transient behaviors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1408-1411

  Mulati, David ^a   Fuyuki, Takashi ^b   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Mesa structure; Minority carrier lifetime; Multicrystalline silicon; Surface recombination; Switching transients

Indexed keywords

CHARGE CARRIERS; CRYSTAL STRUCTURE; GRAIN BOUNDARIES; SEMICONDUCTING SILICON;

MESA STRUCTURE; MINORITY CARRIER LIFETIME; MULTICRYSTALLINE SILICON; SURFACE RECOMBINATION; SWITCHING TRANSIENTS;

SILICON SOLAR CELLS;

EID: 0032662015     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1408     Document Type: Article

References (6)

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