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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 44, Issue 1, 2011, Pages 339-344

An optimized design of 10-nm-scale dual-material surrounded gate MOSFETs for digital circuit applications

(3) Djeffal, F a Lakhdar, N a Yousfi, A a

a UNIVERSITY OF BATNA (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; CIRCUIT APPLICATION; DRAIN-INDUCED BARRIER LOWERING; ELECTRICAL PARAMETER; ELECTRICAL PERFORMANCE; GATE STRUCTURE; GEOMETRICAL PARAMETERS; MEMORY APPLICATIONS; MOSFETS; MULTI OBJECTIVE; NANO SCALE; OBJECTIVE FUNCTIONS; OPTIMIZED DESIGNS; SHORT-CHANNEL EFFECT; SUBTHRESHOLD; SUBTHRESHOLD SWING;

ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; MATHEMATICAL MODELS; MULTIOBJECTIVE OPTIMIZATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY;

MOSFET DEVICES;

EID: 80054688717 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2011.09.007 Document Type: Article

Times cited : (43)

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