New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Solid-State Electronics

Volumn 65-66, Issue 1, 2011, Pages 51-56

  Carrre, J P ^a   Oddou, J P ^a   Place, S ^a,b   Richard, C ^a   Benoit, D ^a   Jenny, C ^a   Gatefait, M ^a   Aumont, C ^a   Tournier, A ^a   Roy, F ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Activation energy; CMOS image sensor; Dark current; Fixed charges; Plasma damage; UV radiation

Indexed keywords

CMOS IMAGE SENSOR; DIELECTRIC LAYER; FIXED CHARGES; NEW MECHANISMS; NITRIDE LAYERS; P-LAYER; PHOTO GENERATION; PIXEL ARCHITECTURES; PLASMA DAMAGE; PLASMA ETCH; PLASMA INDUCED DAMAGE; SURFACE GENERATIONS; TEMPERATURE DEPENDENCE;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; DARK CURRENTS; DEGRADATION; DIGITAL CAMERAS; ELECTROMAGNETIC INDUCTION; IMAGE SENSORS; NITRIDES; OPTIMIZATION; PHOTODIODES; PIXELS; PLASMAS; SENSORS; ULTRAVIOLET RADIATION;

PLASMA DIAGNOSTICS;

EID: 80054037196     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.06.037     Document Type: Conference Paper

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