Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4864-4868

  Tokashiki, Ken ^a   Bai, KeunHee ^a   Baek, KyeHyun ^a   Kim, Yongjin ^a   Min, Gyungjin ^a   Kang, Changjin ^a   Cho, Hanku ^a   Moon, Jootae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CMOS APS; plasma charging damage; white pixel defect

Indexed keywords

CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MAGNETIZATION; REACTIVE ION ETCHING; SENSORS; ULTRAVIOLET RADIATION;

CMOS APS; GATE LEAKAGE; PLASMA CHARGING DAMAGE; WHITE PIXEL DEFECTS;

PLASMA APPLICATIONS;

EID: 33947229439     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.065     Document Type: Article

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