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Volumn , Issue , 2009, Pages 395-398
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Noise as a characterization tool for reliability under illumination of transfer gate transistor for image sensors applications
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Author keywords
[No Author keywords available]
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Indexed keywords
1/F NOISE;
AGEING EFFECTS;
CHANNEL POSITION;
CMOS TRANSISTORS;
CONDUCTION PATHS;
NOISE VARIATIONS;
OXIDE TRAPS;
RELIABILITY INVESTIGATIONS;
RELIABILITY TEST;
STRESS CONDITION;
TRANSFER GATE;
DIGITAL IMAGE STORAGE;
IMAGE SENSORS;
RELIABILITY;
TRANSISTORS;
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EID: 72849147247
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2009.5331577 Document Type: Conference Paper |
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Times cited : (3)
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References (10)
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