Electronic properties of defects in polycrystalline dielectric materials

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1751-1755

  McKenna, K P ^a,b   Shluger, A L ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Defects; Electronic properties; Grain boundaries

Indexed keywords

CHARGE STATE; CMOS DEVICES; CURRENT LEAKAGE; DIELECTRIC BREAKDOWNS; DIELECTRIC INSULATORS; ELECTRONIC DEVICE; FIRST PRINCIPLES METHOD; IN-PROCESS; OXYGEN VACANCY DEFECTS; POLYCRYSTALLINE;

CHARGE TRAPPING; DEFECTS; ELECTRIC BREAKDOWN; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; POLYCRYSTALLINE MATERIALS; VACANCIES;

DIELECTRIC MATERIALS;

EID: 67349259657     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.125     Document Type: Article

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