Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-κ/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Hashemi, Pouya ^a   Teherani, James T ^a   Hoyt, Judy L ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL PROCESS; GATE-ALL-AROUND; HIGH TEMPERATURE; HYDROGEN ANNEALING; INVERSION CAPACITANCE; INVERSION CHARGE DENSITY; METAL-GATE; MOBILITY ENHANCEMENT; P-MOSFETS; QUANTUM MECHANICAL SIMULATIONS; SI NANOWIRE; SOI DEVICES; THERMAL-ANNEALING;

ELECTRON DEVICES; HYDROGEN; MOSFET DEVICES; NANOWIRES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

HOLE MOBILITY;

EID: 79951849369     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703477     Document Type: Conference Paper

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