The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Nakaharai, S ^a   Tezuka, T ^a   Hirashita, N ^a   Toyoda, E ^b   Moriyama, Y ^a   Sugiyama, N ^a   Takagi, S ^c,d  

^a TOSHIBA CORPORATION   (Japan)

^b Nissei Bldg   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY; STRAIN RELAXATION;

GE-ON-INSULATOR (GOI); MICROTWINS; SIGE-ON-INSULATOR (SGOI); THREADING DISLOCATIONS;

CRYSTAL DEFECTS;

EID: 34047246995     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S24     Document Type: Article

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