Fabrication of a ZnO:Al/amorphous-FeSi2 heterojunction at room temperature

Chinese Physics Letters

Volumn 28, Issue 10, 2011, Pages

  Xu, Jia Xiong ^a   Yao, Ruo He ^a   Liu, Yu Rong ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS FILMS; AMORPHOUS SILICON; BUDGET CONTROL; CARRIER LIFETIME; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; IRON COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; ZINC OXIDE;

AMORPHOUS PHASIS; CARRIER LIFETIME MEASUREMENTS; CURRENT-VOLTAGE CHARACTERISTICS; DARK CURRENT-VOLTAGE; GLASS SUBSTRATES; MAGNETRON-SPUTTERING; RECTIFYING PROPERTIES; STRUCTURAL AND ELECTRICAL PROPERTIES; THIN-FILMS; ZNO:AL;

X RAY DIFFRACTION;

EID: 80053996961     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/10/107304     Document Type: Article

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