Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 72-76

  Milosavljevic M ^a   Shao, G ^a   Gwilliam, R M ^a   Gao, Y ^b   Lourenco, M A ^a   Valizadeh, R ^c   Colligon, J S ^c   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c MANCHESTER METROPOLITAN UNIVERSITY   (United Kingdom)

Author keywords

Amorphous phase; Co sputter deposition; Ion implantation; Iron disilicide

Indexed keywords

DEPOSITION; ION IMPLANTATION; IRON COMPOUNDS; LAYERED MANUFACTURING; SEMICONDUCTING SILICON; SILICON COMPOUNDS; SOLAR CELLS; SYNTHESIS (CHEMICAL); THICKNESS CONTROL;

AMORPHOUS PHASE; BAND GAP; CO-SPUTTER DEPOSITION; IRON DISILICIDE;

AMORPHOUS MATERIALS;

EID: 2942666076     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.067     Document Type: Conference Paper

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