Field-effect transistor based on atomically flat rutile TiO2

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Katayama, Masao ^a,b   Ikesaka, Shinya ^c   Kuwano, Jun ^c   Yamamoto, Yuichi ^a,d   Koinuma, Hideomi ^b,e,f   Matsumoto, Yuji ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

^d ASAHI GLASS CO LTD   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

^f NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER MOBILITY; ELECTRIC INSULATORS; GATES (TRANSISTOR); SINGLE CRYSTALS; TITANATE MINERALS; TITANIUM DIOXIDE;

OFF-STATE CURRENTS; RUTILE; RUTILE SINGLE CRYSTALS; TOP GATE TRANSISTOR STRUCTURES;

FIELD EFFECT TRANSISTORS;

EID: 33845737470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2404980     Document Type: Article

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