Synthesis of GaN nanocrystallites by pulsed laser ablation in pure nitrogen background gases

Applied Physics A: Materials Science and Processing

Volumn 104, Issue 3, 2011, Pages 907-911

  Yoshida, Takehito ^a   Kakumoto, Soichiro ^b   Sugimura, Akira ^b   Umezu, Ikurou ^b  

^a ANAN NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b KONAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND GAS; DEPOSITION SUBSTRATES; ELECTRONIC DEVICE; GAN FILM; GAN NANOCRYSTALLITES; GAS PRESSURES; HEXAGONAL SYSTEMS; HIGH PURITY; PULSED-LASER ABLATION; Q SWITCHED ND:YAG LASER; THIRD HARMONIC; WURTZITE STRUCTURE;

ABLATION; GALLIUM NITRIDE; GASES; LASER ABLATION; LASER APPLICATIONS; NANOCRYSTALLITES; NANOPARTICLES; NEODYMIUM LASERS; NITROGEN; SINTERING; ZINC SULFIDE;

PULSED LASERS;

EID: 80053897600     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6438-5     Document Type: Article

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