Quantum confinement effect of amorphous GaN quantum dots prepared by pulsed-laser ablation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 B, 2005, Pages 788-791

  Yoon, Jong Won ^a   Shim, Seung Hwan ^a   Shim, Kwang Bo ^a   Koshizaki, Naoto ^b   Kwon, Young Soo ^c  

^a Hanyang University   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Dong A University   (South Korea)

Author keywords

Amorphous phase; GaN; High resolution transmission electron microscopy; Luminescence; Pulsed laser deposition

Indexed keywords

AMORPHOUS MATERIALS; ELECTRON DIFFRACTION; LASER ABLATION; LUMINESCENCE; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS PHASE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PULSED-LASER ABLATION; QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17144375733     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.788     Document Type: Conference Paper

References (24)

1. S. Nakamura, T. Mukai and M. Senoh: Jpn. J. Appl. Phys. 30 (1991) L1998.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku: Appl. Phys. Lett. 69 (1996) 1477.
3. T. Yoshida, S. Takeyama, Y. Yamada and K. Mutoh: Appl. Phys. Lett. 68 (1996) 1772.
4. K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng and R. M. Kolbas: Appl. Phys. Lett. 75 (1999) 1222.
5. T. J. Goodwin, V. J. Leppert, C. A. Smith, S. H. Risbud, M. Niemeyer, P. P. Power, H. W. H. Lee and L. W. Hrubesh: Appl. Phys. Lett. 69 (1996) 3230.
6. J. L. Coffer, M. A. Johnson, L. Zhang, R. L. Wells and J. F. Janik: Chem. Mater. 9 (1997) 2671.
7. M. Miyamura, K. Tachibana and Y. Arakawa: Appl. Phys. Lett. 80 (2002) 3937.
8. T. J. Goodwin, V. J. Leppert, S. H. Risbud, I. M. Kennedy and H. W. H. Lee: Appl. Phys. Lett. 70 (1997) 3122.
9. Y. G. Cao, X. L. Chen, J. Y. Li, Y. C. Lan and J. K. Liang: Appl. Phys. A 71 (2000) 229.
10. N. Preschilla A, S. Major, N. Kumar, I. Samajdar and R. S. Srinivasa: Appl. Phys. Lett. 77 (2000) 1861.
11. P. Ramvall, S. Tanaka, S. Nomura, P. Riblet and Y. Aoyagi: Appl. Phys. Lett. 73 (1998) 1104.
12. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, J. L. Rouviere and N. Pelekanos: Mater. Sci. Eng. B 59 (1999) 330.
13. C. M. Balkas and R. E. Davis: J. Am. Ceram. Soc. 79 (1996) 2309.
14. J.-W. Hwang, J. P. Cambell, J. Kozubowski, S. A. Hanson, J. F. Evans and W. L. Gladfelter: Chem. Mater. 7 (1995) 517.
15. N. Newman, J. Ross and M. Rubin: Appl. Phys. Lett. 62 (1993) 1242.
16. R. A. Street: Adv. Phys. 30 (1981) 593.
17. N. M. Park, C. J. Choi, T. Y. Seong and S. J. Park: Phys. Rev. Lett. 86 (2001) 1355.
18. P. Stumm and D. A. Drabold: Phys. Rev. Lett. 79 (1997) 677.
19. S. Nonomura, S. Kobayashi, T. Gotoh, S. Hirata, T. Ohmori, T. Itoh, S. Nitta and K. Morigaki: J. Non-Cryst. Solids 198-200 (1996) 174.
20. Y. Yang, V. J. Leppert, S. H. Risbud, B. Twamley, P. P. Power and H. W. H. Lee: Appl. Phys. Lett. 74 (1999) 2262.
21. D. B. Chrisey and G. K. Hubler: Pulsed laser deposition of thin films (John Wiley & Sons, Inc., New York, 1994) Chap. 1, p. 167.
22. G. Schön: J. Electron Spectrosc. Relat. Phenom. 2 (1973) 75.
23. J. Q. Hu, B. Deng, W. X. Zhang, K. B. Tang and Y. T. Qian: Chem. Phys. Lett. 351 (2002) 229.
24. A. Bittar and A. Markwitz: Appl. Phys. Lett. 78 (2001) 619.